Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes
Title
Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes [microform] / C.M. Schnabel ... [et al.].
Published by
[Cleveland, Ohio] : National Aeronautics and Space Administration, Glenn Research Center ; [Springfield, Va. : National Technical Information Service, distributor, 2000]
Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes [microform] / C.M. Schnabel ... [et al.].
Imprint
[Cleveland, Ohio] : National Aeronautics and Space Administration, Glenn Research Center ; [Springfield, Va. : National Technical Information Service, distributor, 2000]
Series
[NASA technical memorandum] ; NASA/TM-2000-209648
NASA technical memorandum ; 209648.
Reproduction
Microfiche. [Washington, D.C. : National Aeronautics and Space Administration, 2000] 1 microfiche.