Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes

Title
  1. Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes [microform] / C.M. Schnabel ... [et al.].
Published by
  1. [Cleveland, Ohio] : National Aeronautics and Space Administration, Glenn Research Center ; [Springfield, Va. : National Technical Information Service, distributor, 2000]

Details

Additional authors
  1. Schnabel, C. M.
  2. NASA Glenn Research Center.
Description
  1. 1 v.
Series statement
  1. [NASA technical memorandum] ; NASA/TM-2000-209648
Uniform title
  1. NASA technical memorandum ; 209648.
Subject
  1. Crystal defects
  2. Schottky diodes
  3. Electron beams
  4. Beam currents
  5. Topography
  6. Synchrotrons
  7. Correlation
Call number
  1. READEX Microfiche NAS 1.15:209648
Note
  1. Shipping list no.: 2000-0603-M.
Reproduction (note)
  1. Microfiche.
Title
  1. Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes [microform] / C.M. Schnabel ... [et al.].
Imprint
  1. [Cleveland, Ohio] : National Aeronautics and Space Administration, Glenn Research Center ; [Springfield, Va. : National Technical Information Service, distributor, 2000]
Series
  1. [NASA technical memorandum] ; NASA/TM-2000-209648
  2. NASA technical memorandum ; 209648.
Reproduction
  1. Microfiche. [Washington, D.C. : National Aeronautics and Space Administration, 2000] 1 microfiche.
Added author
  1. Schnabel, C. M.
  2. NASA Glenn Research Center.
Gpo item no.
  1. 0830-D (MF)
Sudoc no.
  1. NAS 1.15:209648
Research call number
  1. READEX Microfiche NAS 1.15:209648
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