Quantitative mapping of pore fraction variations in silicon nitride using an ultrasonic contact scan technique

Title
  1. Quantitative mapping of pore fraction variations in silicon nitride using an ultrasonic contact scan technique [microform] / Don J. Roth ... [et al.].
Published by
  1. [Washington, DC] : National Aeronautics and Space Administration, Office of Management, Scientific and Technical Information Program ; [Springfield, Va. : National Technical Information Service, distributor], 1993.

Details

Additional authors
  1. Roth, Don J.
  2. United States. National Aeronautics and Space Administration. Scientific and Technical Information Program.
Description
  1. 1 v.
Series statement
  1. NASA technical paper ; 3377
Subject
  1. Silicon nitride
Call number
  1. READEX Microfiche NAS 1.60:3377
Note
  1. Distributed to depository libraries in microfiche.
  2. Shipping list no.: 94-0014-M.
Reproduction (note)
  1. Microfiche.
Title
  1. Quantitative mapping of pore fraction variations in silicon nitride using an ultrasonic contact scan technique [microform] / Don J. Roth ... [et al.].
Imprint
  1. [Washington, DC] : National Aeronautics and Space Administration, Office of Management, Scientific and Technical Information Program ; [Springfield, Va. : National Technical Information Service, distributor], 1993.
Series
  1. NASA technical paper ; 3377
Reproduction
  1. Microfiche. [Washington, D.C. : National Aeronautics and Space Administration, 1993] 1 microfiche.
Added author
  1. Roth, Don J.
  2. United States. National Aeronautics and Space Administration. Scientific and Technical Information Program.
Gpo item no.
  1. 0830-H-15 (MF)
Sudoc no.
  1. NAS 1.60:3377
Research call number
  1. READEX Microfiche NAS 1.60:3377
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