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Thesaurus / INSPEC.

Text

[London] : Institution of Electrical Engineers, c1991-

1991-1999

4 items

FormatCall numberItem location
FormatTextCall numberJSP 78-99 1999Item locationOffsite
FormatCall numberItem location
FormatTextCall numberJSP 78-99 1995Item locationOffsite
FormatCall numberItem location
FormatTextCall numberJSP 78-99 1993Item locationOffsite

Properties of gallium arsenide.

Text

London ; New York : INSPEC, Institution of Electrical Engineers, c1986.

1986

1 item

FormatCall numberItem location
FormatTextCall numberJSF 87-735Item locationOffsite

Properties of amorphous silicon.

Text

London ; New York : INSPEC, Institution of Electrical Engineers, c1985.

1985

1 item

FormatCall numberItem location
FormatTextCall numberJSF 87-1111Item locationOffsite

Properties of amorphous silicon.

Text

London ; New York : INSPEC, Institution of Electrical Engineers, c1989.

1989

1 item

FormatCall numberItem location
FormatTextCall numberJSF 89-617Item locationOffsite

Key abstracts. Business automation.

Text

[Hitchin, England] : INSPEC, The Institution of Electrical Engineers ; [Piscataway, NJ] : Institute of Electrical and Electronics Engineers, 1989-

1989-present

1 item

FormatCall numberItem location
FormatTextCall numberJBM 90-737 Jan. 1989-Jan. 1993, inc.Item locationSchwarzman Building - General Research Room 315

Available - Can be used on site. Please visit New York Public Library - Schwarzman Building to submit a request in person.

Properties of gallium arsenide.

Text

London ; New York : INSPEC, Institution of Electrical Engineers, c1990.

1990

1 item

FormatCall numberItem location
FormatTextCall numberJSF 90-954Item locationOffsite

Properties of indium phosphide.

Text

London ; New York : INSPEC, The Institution of Electrical Engineers, c1991.

1991

1 item

FormatCall numberItem location
FormatTextCall numberJSG 91-150Item locationOffsite

List of journals and other serial sources.

Text

London, England : Institution of Electrical Engineers, 1983-

1983-present

3 items

FormatCall numberItem location
FormatTextCall numberJSM 97-139 1997/1998Item locationOffsite
FormatCall numberItem location
FormatTextCall numberJSM 97-139 1994/1995Item locationOffsite
FormatCall numberItem location
FormatTextCall numberJSM 97-139 1989Item locationOffsite

Science abstracts. Series A, Physics abstracts.

Text

London : Institution of Electrical Engineers, c1967-

1967-present

594 items

FormatCall numberItem location
FormatTextCall numberJSM 95-251 no. 256907-271846 (Dec 15, 2006)Item locationOffsite
FormatCall numberItem location
FormatTextCall numberJSM 95-251 no. 248399-256906 (Dec 1, 2006)Item locationOffsite
FormatCall numberItem location
FormatTextCall numberJSM 95-251 no. 239854-250538 (Dec 15, 2007)Item locationOffsite

Properties of lattice-matched and strained indium gallium arsenide / edited by Pallab Bhattacharya.

Text

London : INSPEC, the Institution of Electrical Engineers, c1993.

1993

1 item

FormatCall numberItem location
FormatTextCall numberJSF 94-336Item locationOffsite

Properties of group III nitrides / edited by James H. Edgar.

Text

London : INSPEC, Institution of Electrical Engineers, c1994.

1994

1 item

FormatCall numberItem location
FormatTextCall numberJSF 95-323Item locationOffsite

Properties of narrow gap cadmium-based compounds / edited by Peter Capper.

Text

London : INSPEC, the Institution of Electrical Engineers, c1994.

1994

1 item

FormatCall numberItem location
FormatTextCall numberJSF 94-747Item locationOffsite

Properties of strained and relaxed silicon germanium / edited by Erich Kasper.

Text

London : INSPEC, c1995.

1995

1 item

FormatCall numberItem location
FormatTextCall numberJSF 95-462Item locationOffsite

Properties of metal silicides / edited by Karen Maex and Marc van Rossum.

Text

Stevenage : INSPEC, c1995.

1995

1 item

FormatCall numberItem location
FormatTextCall numberJSF 96-25Item locationOffsite

Properties of III-V quantum wells and superlattices / edited by Pallab Bhattacharya.

Text

Stevenage : INSPEC, c1996.

1996

1 item

FormatCall numberItem location
FormatTextCall numberJSF 96-687Item locationOffsite

Properties of gallium arsenide / edited by M.R. Brozel and G.E. Stillman.

Text

London : INSPEC, 1996.

1996

1 item

FormatCall numberItem location
FormatTextCall numberJSF 97-76Item locationOffsite

Properties of porous silicon / edited by Leigh Canham.

Text

London : INSPEC, c1987.

1987

1 item

FormatCall numberItem location
FormatTextCall numberJSF 98-123Item locationOffsite

Properties of silicon carbide / edited by Gary L. Harris.

Text

London : INSPEC, Institution of Electrical Engineers, c1995.

1995

2 items

FormatCall numberItem location
FormatTextCall numberJSF 98-355 2nd copyItem locationOffsite
FormatCall numberItem location
FormatTextCall numberJSF 98-355Item locationOffsite

Properties of crystalline silicon / edited by Robert Hull.

Text

London : INSPEC, the Institution of Electrical Engineers, c1999.

1999

1 item

FormatCall numberItem location
FormatTextCall numberJSF 00-397Item locationOffsite

Tapes 73 : proceedings of the first INSPEC Tape Workshop, held in London, February 6-8th, 1973.

Text

London : INSPEC, Institution of Electrical Engineers, c1973.

1973

1 item

FormatCall numberItem location
FormatTextCall numberJSG 00-98Item locationOffsite

INSPEC ondisc.

Text

Ann Arbor, MI : University Microfilms.

unknown-present

7 items

FormatCall numberItem location
FormatTextCall number*WSC-43 2002:Jan. -Sept.Item locationOffsite
FormatCall numberItem location
FormatTextCall number*WSC-43 2002:Jan. -Mar.Item locationOffsite
FormatCall numberItem location
FormatTextCall number*WSC-43 2002:Jan. -JuneItem locationOffsite

Properties of indium phosphide.

Text

London ; New York : INSPEC, [1991], ©1991.

1991-1991

1 item

FormatCall numberItem location
FormatTextCall numberTK7871.15.I53 P76 1991Item locationOff-site

Properties of gallium arsenide.

Text

London ; New York : INSPEC, The Institution of Electrical Engineers, [1990], ©1990.

1990-1990

1 item

FormatCall numberItem location
FormatTextCall numberTK7871.15.G3 P76 1990Item locationOff-site

List of journals and other serial sources.

Text

London, England : Institution of Electrical Engineers, 1983-

1983-present

1 item

FormatCall numberItem location
FormatTextCall numberZ7143 .I57 1996/7Item locationOff-site

Properties of aluminium gallium arsenide / edited by Sadao Adachi.

Text

Stevenage, Herts., UK : IEE : INSPEC, [1993], ©1993.

1993-1993

1 item

FormatCall numberItem location
FormatTextCall numberTK7871.15.G3 P767 1993gItem locationOff-site

Properties of lattice-matched and strained indium gallium arsenide / edited by Pallab Bhattacharya.

Text

London : INSPEC, the Institution of Electrical Engineers, [1993], ©1993.

1993-1993

1 item

FormatCall numberItem location
FormatTextCall numberTK7871.99.C65 P78 1993gItem locationOff-site

Properties of strained and relaxed silicon germanium / edited by Erich Kasper.

Text

London : INSPEC, [1995], ©1995.

1995-1995

1 item

FormatCall numberItem location
FormatTextCall numberTK7871.85 .P76 1995Item locationOff-site

Properties of narrow gap cadmium-based compounds / edited by Peter Capper.

Text

London : INSPEC, the Institution of Electrical Engineers, [1994], ©1994.

1994-1994

1 item

FormatCall numberItem location
FormatTextCall numberQC612.S4 C3 1994gItem locationOff-site

Properties of group III nitrides / edited by James H. Edgar.

Text

London : INSPEC, Institution of Electrical Engineers, [1994], ©1994.

1994-1994

1 item

FormatCall numberItem location
FormatTextCall numberTA455.N5 P76 1994gItem locationOff-site

Properties and growth of diamond / edited by Gordon Davies.

Text

London, U.K. : INSPEC, the Institution of Electrical Engineers, [1994], ©1994.

1994-1994

1 item

FormatCall numberItem location
FormatTextCall numberQE393 .P75 1994gItem locationOff-site

Properties of silicon carbide / edited by Gary L. Harris.

Text

London : INSPEC, Institution of Electrical Engineers, [1995], ©1995.

1995-1995

1 item

FormatCall numberItem location
FormatTextCall numberTP261.C3 P76 1995Item locationOff-site

Properties of gallium arsenide / edited by M.R. Brozel and G.E. Stillman.

Text

London : INSPEC, 1996.

1996

1 item

FormatCall numberItem location
FormatTextCall numberTK7871.15.G3 P76 1996gItem locationOff-site

Properties of porous silicon / edited by Leigh Canham.

Text

London : IEE : INSPEC, The Institution of Electrical Engineers, [1997], ©1997.

1997-1997

1 item

FormatCall numberItem location
FormatTextCall numberTK7871.15.S55 P75 1997gItem locationOff-site

Properties of III-V quantum wells and superlattices / edited by Pallab Bhattacharya.

Text

Stevenage : INSPEC, [1996], ©1996.

1996-1996

1 item

FormatCall numberItem location
FormatTextCall numberQC176.8.Q35 P76 1996gItem locationOff-site

Properties of metal silicides / edited by Karen Maex and Marc van Rossum.

Text

Stevenage : INSPEC, [1995], ©1995.

1995-1995

1 item

FormatCall numberItem location
FormatTextCall numberTK7871.15.S54 P76 1995gItem locationOff-site

Properties of amorphous silicon.

Text

London ; New York : INSPEC, Institution of Electrical Engineers, [1985], ©1985.

1985-1985

1 item

FormatCall numberItem location
FormatTextCall numberQD181.S6 P78 1985Item locationOff-site

Properties of lithium niobate / edited by K.K. Wong.

Text

London : INSPEC/Institution of Electrical Engineers, [2002], ©2002.

2002-2002

1 item

FormatCall numberItem location
FormatTextCall numberQD181.L5 P767 2002gItem locationOff-site

Properties of amorphous silicon.

Text

London ; New York : INSPEC, Institution of Electrical Engineers, [1989], ©1989.

1989-1989

1 item

FormatCall numberItem location
FormatTextCall numberQD181.S6 P78 1989Item locationOff-site

Properties of silicon.

Text

London ; New York : INSPEC, Institution of Electrical Engineers, [1988], ©1988.

1988-1988

1 item

FormatCall numberItem location
FormatTextCall numberTK7871.15.S55 P76 1988Item locationOff-site

Classification : a classification scheme for the INSPEC database /cINSPEC

Text

[London] : Institution of Electrical Engineers, [1991-

1991-present

2 items

FormatCall numberItem location
FormatTextCall numberZ697.S5C57q 1991Item locationOff-site
FormatCall numberItem location
FormatTextCall numberZ697.S5C57q 1999Item locationOff-site

List of journals and other serial sources.

Text

London : Institution of Electrical Engineers, 1983-

1983-present

2 items

FormatCall numberItem location
FormatTextCall numberZ7143 .I57a 2002/2003Item locationOff-site
FormatCall numberItem location
FormatTextCall numberZ7143 .I57a 1991/1992Item locationOff-site

Thesaurus / INSPEC.

Text

[London] : Institution of Electrical Engineers, c1991-

1991-present

1 item

FormatCall numberItem location
FormatTextCall numberZ695.1.P5 I57q 1999Item locationOff-site

Properties of porous silicon / edited by Leigh Canham.

Text

London, U.K. : IEE, INSPEC, ©1987.

1987

1 item

FormatCall numberItem location
FormatTextCall numberQD181.S6 P766 1997Item locationOff-site

Classification : a classification scheme for the INSPEC database /cINSPEC

Text

[London] : Institution of Electrical Engineers, [1991-

1991-present

2 items

FormatCall numberItem location
FormatTextCall numberZ697.S5 C57q 1999Item locationOff-site
FormatCall numberItem location
FormatTextCall numberZ697.S5 C57q 1991Item locationOff-site

List of journals and other serial sources.

Text

London : Institution of Electrical Engineers, 1983-

1983-present

2 items

FormatCall numberItem location
FormatTextCall numberZ7143 .I57a 2002/2003Item locationOff-site
FormatCall numberItem location
FormatTextCall numberZ7143 .I57a 1991/1992Item locationOff-site

Properties of gallium arsenide.

Text

London ; New York : INSPEC, Institution of Electrical Engineers, c1990.

1990

1 item

FormatCall numberItem location
FormatTextCall numberTK7871.15.G3 P76 1990Item locationOff-site

Properties of aluminium gallium arsenide / edited by Sadao Adachi.

Text

London : IEE, INSPEC, ©1993.

1993

1 item

FormatCall numberItem location
FormatTextCall numberQC611.8.G3 P766 1993Item locationOff-site

Thesaurus / INSPEC.

Text

[London] : Institution of Electrical Engineers, c1991-

1991-present

1 item

FormatCall numberItem location
FormatTextCall numberZ695.1.P5 I57q Oversize 1999Item locationOff-site

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