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Thesaurus / INSPEC.
Text
[London] : Institution of Electrical Engineers, c1991-
1991-1999
4 items
Format | Call number | Item location |
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FormatText | Call numberJSP 78-99 1999 | Item locationOffsite |
Format | Call number | Item location |
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FormatText | Call numberJSP 78-99 1995 | Item locationOffsite |
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSP 78-99 1993 | Item locationOffsite |
Properties of gallium arsenide.
Text
London ; New York : INSPEC, Institution of Electrical Engineers, c1986.
1986
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSF 87-735 | Item locationOffsite |
Properties of amorphous silicon.
Text
London ; New York : INSPEC, Institution of Electrical Engineers, c1985.
1985
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSF 87-1111 | Item locationOffsite |
Properties of amorphous silicon.
Text
London ; New York : INSPEC, Institution of Electrical Engineers, c1989.
1989
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSF 89-617 | Item locationOffsite |
Key abstracts. Business automation.
Text
[Hitchin, England] : INSPEC, The Institution of Electrical Engineers ; [Piscataway, NJ] : Institute of Electrical and Electronics Engineers, 1989-
1989-present
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJBM 90-737 Jan. 1989-Jan. 1993, inc. | Item locationSchwarzman Building - General Research Room 315 |
Available - Can be used on site. Please visit New York Public Library - Schwarzman Building to submit a request in person.
Properties of gallium arsenide.
Text
London ; New York : INSPEC, Institution of Electrical Engineers, c1990.
1990
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSF 90-954 | Item locationOffsite |
Properties of indium phosphide.
Text
London ; New York : INSPEC, The Institution of Electrical Engineers, c1991.
1991
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSG 91-150 | Item locationOffsite |
List of journals and other serial sources.
Text
London, England : Institution of Electrical Engineers, 1983-
1983-present
3 items
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSM 97-139 1997/1998 | Item locationOffsite |
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSM 97-139 1994/1995 | Item locationOffsite |
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSM 97-139 1989 | Item locationOffsite |
Science abstracts. Series A, Physics abstracts.
Text
London : Institution of Electrical Engineers, c1967-
1967-present
594 items
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSM 95-251 no. 256907-271846 (Dec 15, 2006) | Item locationOffsite |
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSM 95-251 no. 248399-256906 (Dec 1, 2006) | Item locationOffsite |
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSM 95-251 no. 239854-250538 (Dec 15, 2007) | Item locationOffsite |
Properties of lattice-matched and strained indium gallium arsenide / edited by Pallab Bhattacharya.
Text
London : INSPEC, the Institution of Electrical Engineers, c1993.
1993
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSF 94-336 | Item locationOffsite |
Properties of group III nitrides / edited by James H. Edgar.
Text
London : INSPEC, Institution of Electrical Engineers, c1994.
1994
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSF 95-323 | Item locationOffsite |
Properties of narrow gap cadmium-based compounds / edited by Peter Capper.
Text
London : INSPEC, the Institution of Electrical Engineers, c1994.
1994
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSF 94-747 | Item locationOffsite |
Properties of strained and relaxed silicon germanium / edited by Erich Kasper.
Text
London : INSPEC, c1995.
1995
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSF 95-462 | Item locationOffsite |
Properties of metal silicides / edited by Karen Maex and Marc van Rossum.
Text
Stevenage : INSPEC, c1995.
1995
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSF 96-25 | Item locationOffsite |
Properties of III-V quantum wells and superlattices / edited by Pallab Bhattacharya.
Text
Stevenage : INSPEC, c1996.
1996
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSF 96-687 | Item locationOffsite |
Properties of gallium arsenide / edited by M.R. Brozel and G.E. Stillman.
Text
London : INSPEC, 1996.
1996
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSF 97-76 | Item locationOffsite |
Properties of porous silicon / edited by Leigh Canham.
Text
London : INSPEC, c1987.
1987
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSF 98-123 | Item locationOffsite |
Properties of silicon carbide / edited by Gary L. Harris.
Text
London : INSPEC, Institution of Electrical Engineers, c1995.
1995
2 items
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSF 98-355 2nd copy | Item locationOffsite |
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSF 98-355 | Item locationOffsite |
Properties of crystalline silicon / edited by Robert Hull.
Text
London : INSPEC, the Institution of Electrical Engineers, c1999.
1999
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSF 00-397 | Item locationOffsite |
Tapes 73 : proceedings of the first INSPEC Tape Workshop, held in London, February 6-8th, 1973.
Text
London : INSPEC, Institution of Electrical Engineers, c1973.
1973
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSG 00-98 | Item locationOffsite |
Properties of silicon germanium and SiGe:Carbon / edited by Erich Kasper and Klara Lyutovich.
Text
London : INSPEC, c2000.
2000
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberJSF 00-821 | Item locationOffsite |
INSPEC ondisc.
Text
Ann Arbor, MI : University Microfilms.
unknown-present
7 items
Format | Call number | Item location |
---|---|---|
FormatText | Call number*WSC-43 2002:Jan. -Sept. | Item locationOffsite |
Format | Call number | Item location |
---|---|---|
FormatText | Call number*WSC-43 2002:Jan. -Mar. | Item locationOffsite |
Format | Call number | Item location |
---|---|---|
FormatText | Call number*WSC-43 2002:Jan. -June | Item locationOffsite |
Properties of indium phosphide.
Text
London ; New York : INSPEC, [1991], ©1991.
1991-1991
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberTK7871.15.I53 P76 1991 | Item locationOff-site |
Properties of gallium arsenide.
Text
London ; New York : INSPEC, The Institution of Electrical Engineers, [1990], ©1990.
1990-1990
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberTK7871.15.G3 P76 1990 | Item locationOff-site |
List of journals and other serial sources.
Text
London, England : Institution of Electrical Engineers, 1983-
1983-present
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberZ7143 .I57 1996/7 | Item locationOff-site |
Properties of aluminium gallium arsenide / edited by Sadao Adachi.
Text
Stevenage, Herts., UK : IEE : INSPEC, [1993], ©1993.
1993-1993
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberTK7871.15.G3 P767 1993g | Item locationOff-site |
Properties of lattice-matched and strained indium gallium arsenide / edited by Pallab Bhattacharya.
Text
London : INSPEC, the Institution of Electrical Engineers, [1993], ©1993.
1993-1993
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberTK7871.99.C65 P78 1993g | Item locationOff-site |
Properties of strained and relaxed silicon germanium / edited by Erich Kasper.
Text
London : INSPEC, [1995], ©1995.
1995-1995
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberTK7871.85 .P76 1995 | Item locationOff-site |
Properties of narrow gap cadmium-based compounds / edited by Peter Capper.
Text
London : INSPEC, the Institution of Electrical Engineers, [1994], ©1994.
1994-1994
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberQC612.S4 C3 1994g | Item locationOff-site |
Properties of group III nitrides / edited by James H. Edgar.
Text
London : INSPEC, Institution of Electrical Engineers, [1994], ©1994.
1994-1994
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberTA455.N5 P76 1994g | Item locationOff-site |
Properties and growth of diamond / edited by Gordon Davies.
Text
London, U.K. : INSPEC, the Institution of Electrical Engineers, [1994], ©1994.
1994-1994
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberQE393 .P75 1994g | Item locationOff-site |
Properties of silicon carbide / edited by Gary L. Harris.
Text
London : INSPEC, Institution of Electrical Engineers, [1995], ©1995.
1995-1995
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberTP261.C3 P76 1995 | Item locationOff-site |
Properties of gallium arsenide / edited by M.R. Brozel and G.E. Stillman.
Text
London : INSPEC, 1996.
1996
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberTK7871.15.G3 P76 1996g | Item locationOff-site |
Properties of porous silicon / edited by Leigh Canham.
Text
London : IEE : INSPEC, The Institution of Electrical Engineers, [1997], ©1997.
1997-1997
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberTK7871.15.S55 P75 1997g | Item locationOff-site |
Properties of III-V quantum wells and superlattices / edited by Pallab Bhattacharya.
Text
Stevenage : INSPEC, [1996], ©1996.
1996-1996
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberQC176.8.Q35 P76 1996g | Item locationOff-site |
Properties of metal silicides / edited by Karen Maex and Marc van Rossum.
Text
Stevenage : INSPEC, [1995], ©1995.
1995-1995
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberTK7871.15.S54 P76 1995g | Item locationOff-site |
Properties of amorphous silicon.
Text
London ; New York : INSPEC, Institution of Electrical Engineers, [1985], ©1985.
1985-1985
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberQD181.S6 P78 1985 | Item locationOff-site |
Properties of lithium niobate / edited by K.K. Wong.
Text
London : INSPEC/Institution of Electrical Engineers, [2002], ©2002.
2002-2002
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberQD181.L5 P767 2002g | Item locationOff-site |
Properties of amorphous silicon.
Text
London ; New York : INSPEC, Institution of Electrical Engineers, [1989], ©1989.
1989-1989
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberQD181.S6 P78 1989 | Item locationOff-site |
Properties of silicon.
Text
London ; New York : INSPEC, Institution of Electrical Engineers, [1988], ©1988.
1988-1988
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberTK7871.15.S55 P76 1988 | Item locationOff-site |
Classification : a classification scheme for the INSPEC database /cINSPEC
Text
[London] : Institution of Electrical Engineers, [1991-
1991-present
2 items
Format | Call number | Item location |
---|---|---|
FormatText | Call numberZ697.S5C57q 1991 | Item locationOff-site |
Format | Call number | Item location |
---|---|---|
FormatText | Call numberZ697.S5C57q 1999 | Item locationOff-site |
List of journals and other serial sources.
Text
London : Institution of Electrical Engineers, 1983-
1983-present
2 items
Format | Call number | Item location |
---|---|---|
FormatText | Call numberZ7143 .I57a 2002/2003 | Item locationOff-site |
Format | Call number | Item location |
---|---|---|
FormatText | Call numberZ7143 .I57a 1991/1992 | Item locationOff-site |
Thesaurus / INSPEC.
Text
[London] : Institution of Electrical Engineers, c1991-
1991-present
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberZ695.1.P5 I57q 1999 | Item locationOff-site |
Properties of porous silicon / edited by Leigh Canham.
Text
London, U.K. : IEE, INSPEC, ©1987.
1987
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberQD181.S6 P766 1997 | Item locationOff-site |
Classification : a classification scheme for the INSPEC database /cINSPEC
Text
[London] : Institution of Electrical Engineers, [1991-
1991-present
2 items
Format | Call number | Item location |
---|---|---|
FormatText | Call numberZ697.S5 C57q 1999 | Item locationOff-site |
Format | Call number | Item location |
---|---|---|
FormatText | Call numberZ697.S5 C57q 1991 | Item locationOff-site |
List of journals and other serial sources.
Text
London : Institution of Electrical Engineers, 1983-
1983-present
2 items
Format | Call number | Item location |
---|---|---|
FormatText | Call numberZ7143 .I57a 2002/2003 | Item locationOff-site |
Format | Call number | Item location |
---|---|---|
FormatText | Call numberZ7143 .I57a 1991/1992 | Item locationOff-site |
Properties of gallium arsenide.
Text
London ; New York : INSPEC, Institution of Electrical Engineers, c1990.
1990
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberTK7871.15.G3 P76 1990 | Item locationOff-site |
Properties of aluminium gallium arsenide / edited by Sadao Adachi.
Text
London : IEE, INSPEC, ©1993.
1993
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberQC611.8.G3 P766 1993 | Item locationOff-site |
Thesaurus / INSPEC.
Text
[London] : Institution of Electrical Engineers, c1991-
1991-present
1 item
Format | Call number | Item location |
---|---|---|
FormatText | Call numberZ695.1.P5 I57q Oversize 1999 | Item locationOff-site |