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Measurement of carrier transport and recombination parameter in heavily doped silicon [microform] : final report.
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Stanford, CA : Solid State Electronics Laboratory, Stanford Electronics Laboratories, Dept. of Electrical Engineering, Stanford University ; [Washington, D.C. : National Aeronautics and Space Administration ; Springfield, Va. : National Technical Information Service, distributor, 1986-
1986-present
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Characterization of the transport properties of channel delta-doped structures by light-modulated Shubnikov-de Haas measurements [microform] / R.A. Mena ... [et al.].
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[Washington, D.C.] : National Aeronautics and Space Administration ; [Springfield, Va. : National Technical Information Service, distributor, 1995]
1995
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Mixed carrier conduction in modulation-doped field effect transistors [microform] / S.E. Schacham ... [et al.].
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[Washington, D.C. : National Aeronautics and Space Administration ; Springfield, Va. : National Technical Information Service, distributor, 1995]
1995
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Heavy doping effects in high efficiency silicon solar cells [microform] : quarterly report for period covering October 31, 1984 - December 31, 1984 / by F.A. Lindholm and A. Neugroschel.
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[Pasadena, Calif. : National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, 1984]
1984
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Heavy doping effects in high efficiency silicon solar cells [microform] : quarterly report for period covering January 1, 1985 - March 31, 1985 / by F.A. Lindholm and A. Neugroschel.
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[Pasadena, Calif. : National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, 1985?]
1985
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